2N2222 transistor datasheet pinout
2N2222 transistor Datasheet pinout
2N2222 NPN Transistor Datasheet, pinout, features and more
**General Description:**
The 2N2222 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It is commonly used in a wide range of electronic circuits due to its versatility and reliability.
**Features:**
- NPN silicon transistor
- Low power, high gain
- Collector current (IC): 800mA
- Collector-base voltage (VCBO): 75V
- Collector-emitter voltage (VCEO): 40V
- Emitter-base voltage (VEBO): 6V
- Transition frequency (ft): 250 MHz (typical)
- Low noise and distortion
- TO-92 package for easy mounting
**Pin Configuration:**
- Collector (C)
- Base (B)
- Emitter (E)
**Absolute Maximum Ratings:**
- Collector-base voltage (VCBO): 75V
- Collector-emitter voltage (VCEO): 40V
- Emitter-base voltage (VEBO): 6V
- Collector current (IC): 800mA
- Collector power dissipation (PC): 500mW
- Junction temperature (TJ): 200°C
- Storage temperature (Tstg): -55°C to +150°C
**Electrical Characteristics (TJ = 25°C unless otherwise specified):**
**Typical Applications:**
- Amplification of weak signals
- Switching applications
- Signal processing
- Oscillators
- Pulse generators
- Audio amplifiers
- RF amplifiers
**Package Information:**
- TO-92 package with three leads
- Epoxy encapsulation for protection
- Lead material: Tin-plated copper
**Important Notes:**
- This transistor is an NPN type, meaning that it requires a positive voltage at the base (B) with respect to the emitter (E) to turn on.
- Proper biasing and current limiting should be used in your circuit to prevent damage to the transistor.
- Ensure that the maximum ratings are not exceeded, especially with regard to voltage and current.
**Disclaimer:**
The information provided in this datasheet is for reference purposes only. It is essential to consult the manufacturer's datasheet and specifications for the most accurate and up-to-date information before using this transistor in any application.
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